A new gate drive for a single-phase matrix converter

Rahimi Baharom, Nor Farahaida Abdul Rahman, Muhamad Nabil Hidayat, Khairul Safuan Muhammad, Nor Zaihar Yahaya

Abstract


This paper presents a new gate drive circuit using IR2110 to drive Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) or Insulated-Gate Bipolar Transistor (IGBTs) switches for a Single-Phase Matrix Converter (SPMC) circuit topology. The proposed gate drive circuit is in a position to achieve fast switching thanks to high speed operation devices with lower reverse recovery time, trr. The main advantages of the proposed gate drive circuit are capable to drive two power switches using a single IR2110 gate driver, and capable to provide isolation between high side and low side of power switches. As a result, the proposed gate drive circuit just uses four IR2110 gate drives in order to control eight switches of SPMC circuit, thus, solve the conventional bulky gate drive circuit problem in SPMCs operation.  This is in line with the international power electronic technology road-maps to reduce losses, cost, volume, therefore to raise up the power density of power electronics converters. Validation of the proposed gate drive circuit have been done through the experimental test-rig. As a result, such new theoretical enhancements can be used as a novel foundation of future high power density of SPMC circuit topology and in-line with the Fourth Industrial Revolution (IR 4.0) which were characterized mainly by advances in technology.

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DOI: http://doi.org/10.11591/ijpeds.v11.i2.pp%25p
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